●国際学会
“Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy”,
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki, and K. Nakajima,
International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003), Lyon, France, October 5-10 (2003).

“Solution growth of self standing 6H-SiC single crystal using metal solvent”,
K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima,
International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003), Lyon, France, October 5-10 (2003).

“TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent”,
K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima,
International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003), Lyon, France, October 5-10 (2003).

“Melt Growth of SiGe Bulk Crystals with Uniform Composition and SiGe Multicrystals with Microscopic Compositional Distribution for New Si/SiGe Heterostructural Solar Cells”,
K. Nakajima, K. Fujiwara, Y. Azuma, N. Usami, T. Ujihara, G. Sazaki,
The Fourth Romanian Conference on Advanced Materials, Constanta, Romania, September 15-18 (2003).

“Control of the Grain Orientations of Organic Semiconductor PTCDA Thin Film Crystals Epitaxially Grown on Hydrogen-Terminated Si(111) Substrate”,
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima,
The Fourth Romanian Conference on Advanced Materials, Constanta, Romania, September 15-18 (2003).

“Prediction of strain induced poly-crystallization during crystal growth”,
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima,
Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20-24 (2003).

“Way to choose appropriate solvents to prepare high-quality crystalline-silicon layers by LPE method for photovoltaic materials”,
T. Ujihara, K. Obara, K. Fujiwara, G. Sazaki, N. Usami, T. Shishido, K. Nakajima,
Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20-24 (2003).

“In situ observation of solid-liquid interface during crystal growth from silicon melt”,
K. Fujiwara, T. Ujihara, N. Usami, G. Sazaki, and K. Nakajima,
Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20-24 (2003).

“Way to choose appropriate solvents to prepare high-quality crystalline-silicon layers by LPE method for photovoltaic materials”,
T. Ujihara, K. Obara, K. Fujiwara, G. Sazaki, N. Usami, T. Shishido, K. Nakajima,
Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20-24 (2003).

“Growth and properties of SiGe multicrystals with microscopic compositional distribution for new Si/SiGe heterostructural solar cells”,
K. Nakajima, K. Fujiwara, N. Usami, T. Takahashi, T. Ujihara, G. Sazaki, T. Shishido,
Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20-24 (2003).

“Observation of geometrical selection of SiGe bulk crystal using EBSP measurement and its utilization for restraining polycrystallization”,
Y.Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima,
Fifteenth American Conference on Crystal Growth and Epitaxy, Keystone, Colorado, July 20-24 (2003).

“How to grow a protein crystal of better quality: proposals from crystal growth physics”,
G. Sazaki, T. Matsui, T. Ujihara, K. Fujiwara, N. Usami, K. Nakajima,
Crystallogenesis and Protein Crystallography, Mexico City, Mexico, June 23-26 (2003).

“Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime”,
N. Usami, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, and *Y. Shiraki,
in European Materials Research Society 2003 Spring Meeting, Strasbourg, France, June 10-13 (2003).

“Structure and property of directionally grown SiGe multicrystals with microscopic compositional distribution”,
K. Fujiwara, T. Takahashi, N. Usami, T. Ujihara, G. Sazaki and K. Nakajima,
3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 11-18 (2003).

“Direct observations of crystal growth from silicon”,
K. Fujiwara, K. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguti and K.Nakajima,
3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 11-18 (2003).

“Spatial distribution of composition and strain in multicrystalline SiGe bulk crystal and their impact on solar cell application”,
N. Usami, T. Takahashi, A. Alguno, K. Fujiwara, T. Ujihara, G. Sazaki, and K. Nakajima,
3rd World Conference on Photovoltaic Energy Conversion, Osaka, May 11-18 (2003).

“What is the most important growth parameter on crystal quality of the silicon layer by LPE method?”,
T. Ujihara, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima,
Proc. 3rd World Conference on Photovoltaic Energy Conversion Joint Conference of 13th International PV Science & Engineering Conference30th IEEE PV Specialists Conference 18th European PV Solar Energy Conference, Osaka International Convention Center (Grand Cube, Osaka) Osaka, Japan, May 11-18 (2003).

“Impact of the annealing temperature on the homogeneity of SiGe-on-insulator”,
N. Usami, K. Kutsukake, K. Fujiwara, T. Ujihara, G. Sazaki, S. Ito, B. P. Zhang *and K. Nakajima,
The Third International Conference on SiGe(C) Epitaxy and Heterostructures, Santa Fe, New Mexico, U.S.A, March 9-12 (2003).

“Epitaxial structure and growth behavior of organic semiconductor thin film crystals on hydrogen terminated Si(111) substrate”,
G. Sazaki, T. Fujino, K. Fujiwara, T. Ujihara, N. Usami, and K. Nakajima,
First Kyoto Workshop on Computational Materials Science, Kyoto University, March 1-4 (2003).

“Local strain in multicrystalline-SiGe and its impact on the band structure”,
N. Usami, T. Takahashi, K. Fujiwara, T. Ichitsubo, T. Ujihara, G. Sazaki, and K. Nakajima,
First Kyoto Workshop on Computational Materials Science, Kyoto University, March 1-4 (2003).

“Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge thin film on Si-on-insulator substrate”,
K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa,
First International SiGe Technology and Device Meeting, Nagoya, Japan, January 15-17 (2003).

●国内学会
“多結晶シリコンの融液成長過程のその場観察と方位決定メカニズム”,
藤原航三, 大日方善一, 宇治原徹, 宇佐美徳隆, 佐崎 元, 中嶋一雄,
第６４回応用物理学関係連合講演会, 福岡大学, 七隈キャンパス, 2003年8月30日-9月2日, 31p-D-3.

“SiGeバルク結晶の面方位競合関係の観察及びその多結晶化の抑制への応用”,
我妻幸長, 宇佐美徳隆, 藤原航三, 宇治原徹, 佐崎 元, 村上義弘, 中嶋一雄,
第６４回応用物理学関係連合講演会, 福岡大学, 七隈キャンパス, 2003年8月30日-9月2日, 30a-P1-27.

“多結晶SiGeおよび多結晶Siの融液成長過程のその場観察”,
藤原航三, 大日方善一, 宇治原徹, 宇佐美徳隆, 佐崎 元, 中嶋一雄,
第６４回応用物理学関係連合講演会, 福岡大学, 七隈キャンパス, 2003年8月30日-9月2日, 31a-H-1.

“Ga溶媒を用いた太陽電池用LPE-Si結晶のライフタイム成長温度依存性”,
佐藤祐輔, 宇治原徹, 小原和夫, 藤原航三, 佐崎 元, 宇佐美徳隆, 宍戸統悦, 中嶋一雄,
第６４回応用物理学関係連合講演会, 福岡大学, 七隈キャンパス, 2003年8月30日-9月2日, 31a-H-3.

“空間分解ラマン分光によるSGOI中HF欠陥の解析”,
沓掛健太朗, 宇佐美徳隆, 宇治原徹, 藤原航三, 佐崎 元, 中嶋一雄,
第６４回応用物理学関係連合講演会, 福岡大学, 七隈キャンパス, 2003年8月30日-9月2日, 31a-H-5.

“積層Geドットを利用した太陽電池のSiスペーサ層厚が量子効率に及ぼす影響”,
アルグノアーノルド, 宇佐美徳隆, 藤原航三, 宇治原徹, 澤野憲太郎, 佐崎 元, 白木靖寛, 中嶋一雄,
第６４回応用物理学関係連合講演会, 福岡大学, 七隈キャンパス, 2003年8月30日-9月2日, 31p-H-10.