●国際学会
“Control of the compositional distribution of SiGe bulk crystal for ptoelectronic Applications”,
N. Usami, Y. Azuma, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima,
in The 17th Korean Association of Crystal Growth Fall meeting, Hanseo University, Seosan, Korea, November 8-10 (2001).

“New determination method for mutual diffusion coefficient of metal and semiconductor solutions based on Fick’s first law”,
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami and K. Nakajima,
in Eleventh International Conference on Liquid and Amorphous Metals (LAM11), Yokohama, Japan, September 9-14 (2001).

“Growth of SiGe bulk crystal with compositional uniformity over 20mm by controlling the growth temperature utilizing in situ monitoring system”,
K. Nakajima, Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and T. Shishido,
in Thirteenth American Conference on Crystal Growth and Epitaxy, Burlington, Vermont, USA, August 12-16 (2001).

“Realization of SiGe bulk crystal with compositional uniformity over 20mm by controlling the growth temperature utilizing in situ monitoring system”,
Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima,
in the Thirteenth International conference on Crystal Growth in Conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, July 30-August 4 (2001).

“Optical and structural characterizations of SiGe bulk crystal grown by the multicomponent zone-melting method as a substrate for strain-controlled Si-based functional films”,
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, and K. Nakajima,
in the Thirteenth International Conference on Crystal Growth in Conjunction with the Eleventh International Conference on Vapor Growth and Epitaxy, July 30-August 4 (2001) .

“New method for determination of mutual diffusion coefficient in metal and semiconductor solutions using in-situ composition measurement technique”,
T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami, and K. Nakajima,
in The Thirteenth International Conference on Crystal Growth in Conjunction with The Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, July 30-August 4 (2001).

“Effects of a magnetic field on crystal growth processes of biological molecules”,
G. Sazaki, S. Yanagiya, T. Sato, Y. Matsuura, N. Igarashi, M. Tanaka, S.D. Durbin,S. Miyashita, T. Ujihara, K. Fujiwara, N. Usami, H. Komatsu, K. Nakajima, and M. Motokawa,
in The Thirteenth International Conference on Crystal Growth in Conjunction with The Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, July 30-August 4 (2001).

“In-situ observation of the Marangoni convection in a NaCl aqueous soution under microgravity”,
G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, K. Fujiwara, N. Usami, and K. Nakajima,
in The Thirteenth International Conference on Crystal Growth in Conjunction with The Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, July 30-August 4 (2001).

“In-situ monitoring system of the position and temperature at the crystal-solution interface”,
G. Sazaki, Y. Azuma, N. Usami, T. Ujihara, K. Fujiwara, S. Miyashita, and K. Nakajima,
in The Thirteenth International Conference on Crystal Growth in Conjunction with The Eleventh International Conference on Vapor Growth and Epitaxy, Kyoto, Japan, July 30-August 4 (2001).

“Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications”,
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido,
in European Materials Research Society 2001 Spring Meeting, Strasbourg, France, June 5-8 (2001)

“Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures”,
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima,
in European Materials Research Society 2001 Spring Meeting, Strasbourg, France, June 4-8 (2001).

“Growth of SiGebulk crystal with uniform composition”,
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, and K. Nakajima,
in UK-Japan Co-operative seminar on Electronic Materials and Devices, St. Albains, UK, March 7-9 (2001).

“In-situ measurement of concentration distributions in a high temperature solution”,
T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami, and K. Nakajima,
in The University of Tokyo and National Cheng Kung University Joint Workshop on Advanced Semiconductor Materials and Devices, Tainan, Taiwan, March 15 (2001).

“Growth of SiGe bulk crystal with uniform composition by the muticomponent zone-melting method”,
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, and K. Nakajima,
in The University of Tokyo and National Cheng Kung University Joint Workshop on Advanced Semiconductor Materials and Devices, Tainan, Taiwan, March 15 (2001).

“Successful fabrication of SiGe bulk crystal with uniform composition as a substrate for Si-based heterostructures”,
Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, K. Fujiwara, S. Miyashita and K. Nakajima,
in First International Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, January 21-23 (2001).