“Temperature dependence of carrier relaxation time in gallium phosphide evaluated by photo emission measurements”,
F. Ichihashi, T. Kawaguchi, X. Dong, M. Kuwahara, T. Ito, S. Harada, M. Tagawa, T. Ujihara,
AIP Advances, 7 (11), (2017), 115314.

“Numerical investigation of the transport phenomena occurring in the growth of SiC by the induction heating TSSG method”,
T. Yamamoto, N. Adkar, Y. Okano, T. Ujihara, S. Dost,
J. Cryst. Growth, 474, (2017), pp.50-54.
http://dx.doi.org/10.1016/j.jcrysgro.2016.12.086

“Solvent design for high-purity SiC solution growth”,
S. Harada, G. Hatasa, K. Murayama, T. Kato, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 897, (2017), pp.32-35.
DOI: 10.4028/www.scientific.net/MSF.897.32

“Formation of basal plane dislocations introduced by collision of macrosteps on growth surface during SiC solution growth”,
T. Hori, K. Murayama, S. Harada, S. Xiao, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 897, (2017), pp.28-31.
DOI: 10.4028/www.scientific.net/MSF.897.28

“SiC solution growth on Si face with extremely low density of threading screw dislocations for suppression of polytype transformation”,
K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 897, (2017), pp.24-27.
DOI:10.4028/www.scientific.net/MSF.897.24

“Global simulation of the induction heating TSSG process of SiC for the effects of Marangoni convection, free surface deformation and seed rotation”,
T. Yamamoto, Y. Okano, T. Ujihara, S. Dost,
J. Cryst. Growth, 470, (2017), pp.75-88.
https://doi.org/10.1016/j.jcrysgro.2017.04.016

“Morphology of AlN whiskers grown by reacting N 2 gas and Al vapor”,
M. Matsumoto, H. Saitou, Y. Takeuchi, S. Harada, M. Tagawa, T. Ujihara,
J. Cryst. Growth, 468, (2017), pp.576-580.
DOI: 10.1016/j.jcrysgro.2016.11.127

“Two-step SiC solution growth for dislocation reduction”,
K. Murayama, T. Hori, S. Harada, S. Xiao, M. Tagawa, T. Ujihara,
J. Cryst. Growth, 468, (2017), pp.874-878.
http://dx.doi.org/10.1016/j.jcrysgro.2016.11.100

“Phase transition process in DDAB supported lipid bilayer”,
T. Isogai, S. Nakada, N. Yoshida, H. Sumi, R. Tero, S. Harada, T. Ujihara, M. Tagawa,
J. Cryst. Growth, 468, (2017), pp.88-92.
http://dx.doi.org/10.1016/j.jcrysgro.2016.09.063

“Crystal Orientation Dependence of Precipitate Structure of Electrodeposited Li Metal on Cu Current Collectors”,
K. Ishikawa, Y. Ito, S. Harada, M. Tagawa, T. Ujihara,
Cryst. Growth Des., 17 (5), (2017), pp.2379-2385.
DOI: 10.1021/acs.cgd.6b01710

“Modification of the surface morphology of 4H-SiC by addition of Sn and Al in solution growth with SiCr solvents”,
N. Komatsu, T. Mitani, Y. Hayashi, T. Kato, S. Harada, T. Ujihara, H. Okumura,
J. Cryst. Growth, 458, (2017), pp.37-43.
http://dx.doi.org/10.1016/j.jcrysgro.2016.10.045