Numerical Modeling of the Cellular Structure Formation Process in SiC Solution Growth for Suppression of Solvent Inclusions
Zhou, HQ (Zhou, Huiqin); Miura, H (Miura, Hitoshi); Dang, YF (Dang, Yifan); Fukami, Y (Fukami, Yuma); Takemoto, H (Takemoto, Hisaki); Harada, S (Harada, Shunta); Tagawa, M (Tagawa, Miho); Ujihara, T (Ujihara, Toru)
CRYSTAL GROWTH & DESIGN, 23,5, 3393-3401,2023/5/3 

Machine Learning for Semiconductor Process Simulation Described by Coupled Partial Differential Equations
Sato, R ; Kutsukake, K ; Harada, S ; Tagawa, M ; Ujihara, T,
ADVANCED THEORY AND SIMULATIONS, 2023/7/16

Shunta Harada, Yasutaka Matsubara, Kenta Murayama, Non-destructive identification of edge-component burgers vector of threading dislocations in SiC wafers by birefringence imaging, Diamond and Related Materials, 138, 2023/10

Yusuke Tosa, Ryo Omae, Ryohei Matsumoto, Shogo Sumitani, Shunta Harada, Data-driven automated control algorithm for floating-zone crystal growth derived by reinforcement learning, Scientific Reports, 13, 1, 2023/12

Masashi Kato, Shunta Harada, Hitoshi Sakane, Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective, Japanese Journal of Applied Physics, 63, 2, 020804, 2024/1/15

Huiqin Zhou, Hitoshi Miura, Yuma Fukami, Yifan Dang, Kentaro Kutsukake, Shunta Harada, Miho Tagawa, Toru Ujihara, Effect of Solution Components on Solvent Inclusion in SiC Solution Growth, Crystal Growth & Design, 24,4,1806-1817,2024/2/2