“Solution growth of high-quality and large-area 3C-SiC”,
T. Ujihara, K. Seki, R. Tanaka, S. Kozawa, Alexander, Y. Takeda,
The 16th International Conference on Crystal Growth(ICCG-16) in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14), Beijing, China, August 8-13 (2010).

“次世代パワーデバイス半導体SiCの溶液成長”,
宇治原徹,
日本金属学会・日本鉄鋼協会東海支部学術討論会, 2010年2月23日.