“Coherence of a spin-polarized electron beam emitted from a semiconductor photocathode in a transmission electron microscope”,
M. Kuwahara, S. Kusunoki, Y. Nambo, K. Saitoh, X. Jin, T. Ujihara, H. Asano, Y. Takeda, N. Tanaka,
Appl. Phys. Lett. 105, (2014), 193101.
http://dx.doi.org/10.1063/1.4901745

“Different behavior of threading edge dislocation conversion during the solution growth of 4H-SiC depending on the Burgers vector”,
S. Harada, Y. Yamamoto, K. Seki, A. Horio, M. Tagawa, T. Ujihara,
Acta Materialia, 81, (2014), pp. 284-290.
DOI: 10.1016/j.actamat.2014.08.027

“Growth rate and surface morphology of 4H SiC crystals grown from Si-Cr-C and Si-Cr-Al-C solutions under various temperature gradient conditions”,
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, K. Fujii, T. Ujihara, Y. Matsumoto, K. Kurashige, H.Okumura,
Journal of Crystal Growth, 401, (2014), pp. 681-685.

“Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique”,
K. Kusunoki, N. Okada, K. Kamei, K. Moriguchi, H. Daikoku, M. Kado, H. Sakamoto, T. Bessho, T. Ujihara,
Journal of Crystal Growth, 395, 1 June (2014), pp. 68-73.

“The strain effect on the superconducting properties of BaFe2(As, P)2 thin films grown by molecular beam epitaxy”,
T. Kawaguchi, A. Sakagami, Y. Mori, M. Tabuchi, T. Ujihara, Y. Takeda and H. Ikuta,
Superconductor Science and Technology, 27, (2014), 065005 (6pp).
DOI: 10.1088/0953-2048/27/6/065005

“Low-dislocation-density 4H-SiC crystal growth utilizing dislocation conversion during solution method”,
Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, D. Koike, M. Tagawa, and T. Ujihara,
Applied Physics Express, 7, (2014), 065501.
DOI: 10.7567/APEX.7.065501

“Emregence and Amplification of Chirality via Achiral-Chiral Polymorphic Transformation in Sodium Chlorate Solution Growth”,
H. Niinomi, H. Miura, Y. Kimura, M. Uwaha, H. Katsuno, S. Harada, T. Ujihara and K. Tsukamoto,
Crystal Growth and Design, 14, 7, (2014), pp. 3596-3602.
DOI: 10.1021/cg500527t

“Growth of a smooth CaF2 layer on NdFeAsO thin film”,
N. Sumiya, T. Kawaguchi, M. Chihara, M. Tabuchi, T. Ujihara, A.Ichinose, I. Tsukada and H. Ikuta,
Journal of Physics Conference Series, 507, (2014), 012047.

“Forming two-dimensional structure of DNA-functionalized Au nanoparticles via lipid diffusion in supported lipid bilayers”,
T. Isogai, A. Piednoir, E. Akada, Y. Akahoshi, R. Tero, S. Harada, T. Ujihara, M. Tagawa,
J. Cryst. Growth, 401, (2014), pp. 494-498.

“Solubility measurement of a metastable achiral crystal of sodium chlorate in solution growth”,
H. Niinomi, A. Horio, S. Harada, T. Ujihara, H. Miura, Y. Kimura, K. Tsukamoto,
Journal of Crystal Growth, 394, 15 May (2014), pp.106-111.

“Nitrogen doping of 4H- SiC by the top-seeded solution growth technique using Si-Ti solvent”,
K. Kusunoki, K. Kamei, K. Seki, S. Harada, T. Ujihara,
J. Cryst. Growth, 392, 15 April (2014), pp.60-65.

“Top-Seeded Solution Growth of 3 Inch Diameter 4H-SiC Bulk Crystal Using Metal Solvents”,
K. Kusunoki, K. Kamei, N. Okada, K. Moriguchi, H. Kaido, H. Daikoku, M. Kado, K. Danno, H. Sakamoto, T. Bessho, T. Ujihara,
Mater. Sci. Forum, 778-780, February (2014), pp.79-82.

“Surface Morphology and Threading Dislocation Conversion Behavior during Solution Growth of 4H-SiC Using Al-Si Solvent”,
S. Harada, Y. Yamamoto, S. Y. Xiao, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 778-780, February (2014), pp. 67-70.

“Increase in the Growth Rate by Rotating the Seed Crystal at High Speed during the Solution Growth of SiC”,
T. Umezaki, D. Koike, A. Horio, S. Harada, T. Ujihara,
Mater. Sci. Forum, 778-780, February (2014), pp. 63-66.

●プロシーディングス
“Direct measurement of conduction miniband structure in superlattice by visible-light photoemission spectroscopy”,
F. Ichihashi, D. Shimura, K. Nishitani, T. Kawaguchi, M. Kuwahara, T. Ito, S. Harada, H. Katsuno, M. Tagawa, T.Ujihara,
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th , 8-13 June (2014), pp.2882-2885.
DOI:10.1109/PVSC.2014.6925534