“Epitaxial growth of LaFeAs(O,F) thin films by molecular beam epitaxy”,
T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, K. Takenaka, Y. Takeda, H. Ikuta,
Physica C: Superconductivity, 471, 21-22, (2011), pp. 1174-1176.

“High-quality and large-area 3C-SiC growth on 6H-SiC(0 0 0 1) seed crystal with top-seeded solution method.”,
T. Ujihara, K. Seki, R. Tanaka, S. Kozawa, Alexander, K. Morimoto, K. Sasaki, Y. Takeda,
J. Cryst. Growth, 318, (2011), pp. 389-393.

“Increase of spectral width of stacked InAs quantum dots on GaAs by controlling spacer layer thickness.”,
K. Tani, S. Fuchi, R. Mizutani, T. Ujihara, Y. Takeda,
J. Cryst. Growth, 318, (2011), pp. 1113-1116.

“Defect evaluation of SiC crystal grown by solution method: the study by synchrotron X-ray topography and etching method”,
S. Kozawa, K. Seki, Alexander, Y. Yamamoto, T. Ujihara and Y. Takeda,
Mater. Sci. Forum, 679-680, (2011), pp. 28-31.

“Polytype stability of 4H-SiC seed crystal on solution growth”,
Alexander, K. Seki, S. Kozawa, Y. Yamamoto, T. Ujihara and Y. Takeda,
Mater. Sci. Forum, 679-680, (2011), pp. 24-27.

“Development of spin-polarized transmission electron microscope”,
M. Kuwahara, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi and N Tanaka,
J. Phys.:Conf. Ser. 298, (2011), 012016.

“Status of the high brightness polarized electron source using transmission photocathode”,
N. Yamamoto, X.G.Jin, A. Mano, T. Ujihara, Y. Takeda, S. Okumi, T. Nakanishi, T. Yasue, T. Koshikawa, T.Oshima, T. Saka and H. Horinaka,
J. Phys.:Conf. Ser. 298, (2011), 012017.

“Anomalous Diffusion in Supported Lipid Bilayers Induced by Oxide Surface Nanostructures”,
R. Tero, G. Sazaki, T. Ujihara, and T. Urisu,
Langmuir, 27, (2011), pp. 9662-9665.

“Molecular Beam Epitaxy Growth of Superconducting NdFeAs(O,F) Thin Films Using a F-Getter and a Novel F-Doping Method”,
T. Kawaguchi, H. Uemura, T. Ohno, M. Tabuchi, T. Ujihara, Y. Takeda and H. Ikuta,
Appl. Phys. Express, 4, (2011), 083102 (3 pages).

“Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si Sc C system”,
K. Seki, Alexander, S. Kozawa, T. Ujihara, P. Chaudouet, D. Chaussende, Y. Takeda,
J. Cryst. Growth, 335, 1, (2011), pp. 94-99.