“Kinetic analysis of spinodal decomposition process in Fe-Cr alloys by small angle neutron scattering”,
T. Ujihara, K. Osamura,
Acta Materialia, 48, (2000), pp. 1629-1637.

“Thickness dependence of stable structure of the Stranski-Krastanov mode in the GaPSb/GaP system”,
K. Nakajima, T. Ujihara, S. Miyashita, G. Sazaki,
J. Cryst. Growth, 209, (2000), pp. 637-647.

“In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry”,
T. Ujihara, G. Sazaki, S. Miyashita, N. Usami, K. Nakajima,
Jpn J. Appl. Phys, 39, (2000), pp. 5981-5982.

“SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications”,
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, Y. Yakabe, T. Kondo, S. Koh, B. Zhang, Y. Segawa,Y. Shiraki, S. Kodama, and K. Nakajima,
Appl. Phys. Lett., 77, (2000), pp. 3565-3567.

“Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies”,
K. Nakajima, T. Ujihara, G. Sazaki, and N. Usami,
J. Cryst. Growth, 220, (2000), pp. 413-424.

●プロシーディングス
“Effects of the dislocation density and surface energy on phase diagrams of the S-K mode for the GaInN/GaN and GaPSb/GaP systems”,
K. Nakajima, T. Ujihara, S. Miyashita, and G. Sazaki,
Materials Research Society 2000 Spring Meeting, San Francisco, In Mat. Res. Soc. Symp. Proc., Vol. 618, (2000), pp.285-290.