“Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal”,
Liu Xinbo, Zhu Can, Harada Shunta, Tagawa Miho, Ujihara Toru,
CRYSTENGCOMM, (2019), Volume21, Issue47, 7260-7265.
DOI:  10.1039/c9ce01338e

“Growth Temperature Effects of Chemical Vapor Deposition‐Grown Boron Nitride Layer Using B2H6 and NH3”,
Hisashi Yamada, Sho Inotsume, Naoto Kumagai, Toshikazu Yamada, Mitsuaki Shimizu,
Phys. Status Solidi B 2019, (2019), 1900521.
https://doi.org/10.1002/pssb.201900521

“CVD Growth of BN Thin Films using B2H6”,
Hisashi Yamada, Sho Inotsume, Naoto Kumagai, Toshikazu Yamada, Mituaki Shimizu,
2019 Compound Semiconductor Week (CSW), Nara, Japan, 19-23 May 2019, (2019), 19010146.
DOI: 10.1109/ICIPRM.2019.8819051

“Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method”,
Kazuaki Seki, Kazuhiko Kusunoki, Shinsuke Harada, Toru Ujihara,
Mater. Sci. Forum, 963, (2019), pp.80-84.
https://doi.org/10.4028/www.scientific.net/MSF.963.80

“In Situ Microscopic Observation on Surface Kinetics in Optical Trapping-Induced Crystal Growth: Step Formation, Wetting Transition, and Nonclassical Growth”,
Hiromasa Niinomi, Teruki Sugiyama, Toru Ujihara, Suxia GuoJun, Nozawa Junpei, Okada Takashige, OmatsuSatoshi Uda,
Crystal Growth & Design, (June 6, 2019), 2019, 19, 7, 4138-4150.
DOI: 10.1021/acs.cgd.9b00600

“Nondestructive visualization of threading dislocations in GaN by micro raman mapping”,
Kokubo Nobuhiko, Tsunooka Yosuke, Fujie Fumihiro, Ohara Junji, Onda Shoichi, Yamada Hisashi, Shimizu Mitsuaki, Harada Shunta, Tagawa Miho, Ujihara Toru,
JAPANESE JOURNAL OF APPLIED PHYSICS, (June 1, 2019), 2019, 0021-4922.
DOI: 10.7567/1347-4065/ab0acf

“The Effect of Crucible Rotation and Crucible Size in Top-Seeded Solution Growth of Single-Crystal Silicon Carbide”,
Horiuchi Takashi, Wang Lei, Sekimoto Atsushi, Okano Yasunori, Yamamoto Takuya, Ujihara Toru, Dost Sadik,
CRYSTAL RESEARCH AND TECHNOLOGY, (May 1, 2019), 2019, 0232-1300.
DOI: 10.1002/crat.201900014

“Three-dimensional numerical analysis of Marangoni convection occurring during the growth process of SiC by the RF-TSSG method”,
Wang L., Horiuchi T., Sekimoto A., Okano Y., Ujihara T., Dost S.
JOURNAL OF CRYSTAL GROWTH, (Aug 15, 2019), 2019, 0022-0248.
DOI: 10.1016/j.jcrysgro.2019.05.017

“Plasmonic Trapping-Induced Crystallization of Acetaminophen”,
Hiromasa Niinomi, Teruki Sugiyama , Satoshi Uda, Miho Tagawa, Toru Ujihara, Katsuhiko Miyamoto,Takashige Omatsu,
Cryst. Growth Des., 19, (2019), pp 529-537.
DOI:10.1021/acs.cgd.8b01361

“Adjoint-based sensitivity analysis for the optimal crucible temperature profile in the RF-Heating TSSG-SiC crystal growth process”,
Takashi Horiuchi, Lei Wang, Atsushi Sekimoto, Yasunori Okano, Toru Ujihara, Sadik Dost,
J. Cryst. Growth, 517, 1 July(2019), pp 59-63.
DOI:10.1016/j.jcrysgro.2019.04.001

“機械学習を用いた結晶成長予測モデルの構築とその応用”,
宇治原 徹, 角岡 洋介, 畑佐 豪記, 沓掛 健太朗, 石黒 祥生, 村山 健太, 鳴海 大翔, 原田 俊太, 田川 美穂,
表面と真空, 62巻3号, (2019), pp 136-140.
DOI:10.1380/vss.62.136

“結晶成長学的見地による金属負極の析出形態と結晶方位の相関解明”,
石川 晃平, 三橋 貴仁, 伊藤 靖仁, 竹内 幸久, 原田 俊太, 田川 美穂, 宇治原 徹,
日本結晶成長学会誌, 46巻1号, (2019), pp 136-140.
DOI:10.19009/jjacg.46-1-08

“少量添加で樹脂素材の熱伝導率を向上させるAlNウィスカーフィラーの開発”,
宇治原 徹,
エレクトロニクス実装学会誌, 22巻3号, (2019), pp 195-198.
DOI:10.5104/jiep.22.195