“3C-SiC Crystal on Sapphire by Solution Growth Method”,
K. Shibata, S. Harada, T. Ujihara,
Mater. Sci. Forum, 821-823, (2015), pp. 185-188.
doi:10.4028/www.scientific.net/MSF.821-823.185

“Research on solvent composition for different surface morphology on C face during 4H-SiC solution growth”,
S. Xiao, N. Hara, S. Harada, K. Murayama, K. Aoyagi, T. Sakai, T. Ujihara,
Mater. Sci. Forum, 821-823, (2015), pp. 39-42.
doi:10.4028/www.scientific.net/MSF.821-823.39

“Influences of solution flow and lateral temperature distribution on surface morphology in solution growth of SiC”,
K. Fujii, K. Takei, M. Aoshima, N. Senguttuvan, M. Hiratani, T. Ujihara, Y. Matsumoto, T. Kato, K. Kurashige, H. Okumura,
Mater. Sci. Forum, 821-823, (2015), pp. 35-38.
doi:10.4028/www.scientific.net/MSF.821-823.35

“Improvement of Surface Morphology by Solution Flow Control in Solution Growth of SiC on Off-axis Seeds”,
T. Umezaki, D. Koike, S. Harada, T. Ujihara,
Mater. Sci. Forum, 821-823, (2015), pp. 31-34.
doi:10.4028/www.scientific.net/MSF.821-823.31

“Effect of forced convection by crucible design in solution growth of SiC single crystal”,
K. Kurashige, M. Aoshima, K. Takei, K. Fujii, M. Hiratani, N. Senguttuvan, T. Kato, T. Ujihara, Y. Matsumoto, H. Okumura,
Mater. Sci. Forum, 821-823, (2015), pp. 22-25.
doi:10.4028/www.scientific.net/MSF.821-823.22

“Control of interface Shape by Non-Axisymmetric Solution Convection in Top-Seeded Solution Growth of SiC Crystal”,
D. Koike, T. Umezaki, K. Murayama, K. Aoyagi, S. Harada, M. Tagawa, T. Sakai, T. Ujihara,
Mater. Sci. Forum, 821-823, (2015), pp. 18-21.
doi:10.4028/www.scientific.net/MSF.821-823.18

“Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent”,
N. Komatsu, T. Mitani, T. Takahashi, T. Kato, K. Kurashige, Y. Matsumoto, T. Ujihara, H. Okumura,
Mater. Sci. Forum, 821-823, (2015), pp. 14-17.
doi:10.4028/www.scientific.net/MSF.821-823.14

“4H-SiC Growth from Si-Cr-C Solution under Al and N Co-doping Conditions”,
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura,
Mater. Sci. Forum, 821-823, (2015), pp. 9-13.
doi:10.4028/www.scientific.net/MSF.821-823.9

“Dislocation Conversion during SiC Solution Growth for High-quality Crystals”,
S. Harada, Y. Yamamoto, S. Xiao, D. Koike, T. Mutoh, K. Murayama, K. Aoyagi, T. Sakai, M. Tagawa, T. Ujihara,
Mater. Sci. Forum, 821-823, (2015), pp. 3-8.
doi:10.4028/www.scientific.net/MSF.821-823.3

“Non-uniform electrodeposition of zinc on the (0001) plane”,
T. Mitsuhashi, Y. Ito, Y. Takeuchi, S. Harada, T. Ujihara,
Thin Solid Films, 590, (2015), pp.207-213.
doi:10.1016/j.tsf.2015.07.068

“Effect of aluminum addition on the surface step morphology of 4HSiC grown from Si-Cr-C solution”,
T. Mitani, N. Komatsu, T. Takahashi, T. Kato, S. Harada, T. Ujihara, Y. Matsumoto, K. Kurashige, H. Okumura,
J. Cryst. Growth, 423, 1 August, (2015), pp.45-49.
doi:10.1016/j.jcrysgro.2015.04.032

“バルク結晶成長のこの10年”,
宇治原 徹, 島村清史, 宇佐美 徳隆, 太子 敏則, 樋口 幹雄, 吉村 政志,
日本結晶成長学会誌, 42, (2013), pp.64-68.