“High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth”,
Y. Yamamoto, S. Harada, K. Seki, A. Horio, T. Mitsuhashi, and T. Ujihara,
Appl. Phys. Express, 5, (2012), 115501 (3 pages).

“Development of Spin-Polarized and Pulsed TEM”,
M. Kuwahara, F. Ichihashi, S. Kusunoki, K. Saitoh, T. Ujihara, H. Asano, T. Nakanishi, N. Tanaka,
J. Phys: Conf. Ser., 371 (2012), 012004.

“Stable Growth of 4H-SiC Single Polytype by Controlling the Surface Morphology Using a Temperature Gradient in Solution Growth”,
Y. Yamamoto, K. Seki, S. Kozawa, Alexander, S. Harada, T. Ujihara,
Mater. Sci. Forum, 717-720, (2012), pp.53-56.

“Conversion Mechanism of Threading Screw Dislocation during SiC Solution Growth”,
T. Ujihara, S. Kozawa, K. Seki, Alexander, Y. Yamamoto, S. Harada,
Mater. Sci. Forum, 717-720, (2012), pp.351-354.

“Substrate dependence of the superconducting properties of NdFeAs(O,F) thin films”,
H. Uemura, T. Kawaguchi, T. Ohno, M. Tabuchi, T. Ujihara, Y. Takeda, H. Ikuta,
Solid State Communications, 152, 8, (2012), pp.735-739.

“Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth”,
S. Harada, Alexander, K. Seki, Y. Yamamoto, C. Zhu, Y. Yamamoto, S. Arai, J. Yamasaki, N. Tanaka, and T. Ujihara,
Crystal Growth & Design, 12, (6), (2012), pp.3209-3214.

“Analysis of thickness modulation in GaAs/GaAsP strained superlattice by TEM observation”,
X.G. Jin, H. Nakahara, K. Saitoh, T. Saka, T. Ujihara, N. Tanaka, Y. Takeda ,
J. Cryst. Growth, 353, 1, (2012), pp.84-87.

“30-kV spin-polarized transmission electron microscope with GaAs-GaAsP strained superlattice photocathode”,
M. Kuwahara, S. Kusunoki, X. G. Jin, T. Nakanishi, Y. Takeda, K. Saitoh, T. Ujihara, H. Asano, and N. Tanaka,
Appl. Phys. Lett. 101, (2012), 033102.

“Polytype-selective growth of SiC by supersaturation control in solution growth Original Research Article”,
K. Seki, Alexander, S. Kozawa, S. Harada, T. Ujihara, Y. Takeda,
J. Cryst. Growth, 360, (2012), pp.176-180.