“Pattern size effect on source supply process for sub-micrometer scale selective-area-growth by organometallic vapor phase epitaxy”,
T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda,
J. Cryst. Growth, 289, (2006), pp. 89-95.

“Photovoltage Mapping on Polycrystalline Silicon Solar Cells through Potential Measurements by AFM with Piezo-resistive Cantilever”,
T. Igarashi, T. Ujihara, T. Takahashi,
Jpn. J. Appl. Phys. Part 1, 45, (2006), pp. 2128-2131.

“Solution growth of SiC crystal with high growth rate using accelerated crucible rotation technique”,
K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, and K. Nakajima,
Mater. Sci. Forum, 527-529, (2006), pp. 119-122.

“Growth of SiC single crystal from Si-C-(Co, Fe) ternary solution”,
Nobuyoshi Yashiro, Kazuhiko Kusunoki, Kazuhito Kamei, Mitsuhiro Hasebe, Toru Ujihara and Kazuo Nakajima,
Mater. Sci. Forum, 527-529, (2006), pp. 115-118.

“Size uniformity of InAs dots on mesa-structure templates on (001) InP substrates grown by droplet metal-organic vapor phase epitaxy method”,
T. Ujihara, Y. Yoshida, W-S. Lee, Y. Takeda,
Appl. Phys. Lett., 89, (2006), # 083110.

“分散量子ドット構造を利用した広帯域発光素子”,
李祐植, 三宅信輔, 渕真悟, 宇治原徹, 竹田美和,
日本結晶成長学会誌, 33, (2006), pp. 106-110.

“GaAs/GaAsP歪み超格子偏極電子源の結晶性改善による高性能化”,
宇治原徹, 陳　博,　安井健一, 酒井良介, 山本将博, 中西　彊, 竹田美和,
信学技報, 106, (2006), pp. 79-84.

●プロシーディングス
“The wideband light emission around 800 nm from ternary InAsP quantum dots with an intentionally broadened size and composition distribution”,
S. Miyake, W. S. Lee, T. Ujihara and Y. Takeda,
The 18th Indium Phosphide and Related Materials Conference (IPRM06), Princeton University, Princeton, NJ, USA, 7-11 May (2006), pp. 208-210.

“Evaluation of Strain Field around SiC Particle in Poly-Crystalline Silicon”,
T. Ujihara, T. Ichitsubo, N. Usami, K. Nakajima, Y. Takeda,
2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC4), Waikoloa , Hawaii, USA, 7-12 May (2006) # 272.