“Crystal quality of a 6H-SiC layer grown over macro-defects by liquid phase epitaxy: a Raman spectroscopic study”,
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki and K. Nakajima,
Thin Solid Films, 476, (2005), pp. 206-209.

“A simple approach to determine preferential growth orientation using multiple seed crystals with random orientations and its utilization for seed optimization to restrain polycrystallization of SiGe bulk crystal”,
Y. Azuma, N, Usami, K, Fujiwara, T, Ujihara and K, Nakajima,
J. Cryst. Growth, 276, (2005), pp. 393-400.

“Crystalline quality evaluation of 6H-SiC bulk crystals grown from Si-Ti-C ternary solution”,
K. Kusunoki, K. Kamei, Y. Ueda, S. Naga, Y. Ito, M. Hasebe, T. Ujihar, K. Nakajima,
Mater. Sci. Forum, 483, (2005), pp. 13-16.

“Effects of vicinal steps on the island growth and orientation of epitaxially grown perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate”,
G. Sazaki, T. Fujino, N. Usami, T. Ujihara, K. Fujiwara and K. Nakajima,
J. Cryst. Growth, 273, (2005), pp. 594-602.

“Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams”,
K. Nakajima, Y. Azuma, N. Usami, G. Sazaki, T. Ujihara, K. Fujiwara, T. Shishido, Y. Nishijima and T. Kusunoki,
International Journal of Material & Product Technology, 22, (2005), pp. 185-212.

“Structural properties of directionally grown polycrystalline SiGe for solar cells”,
K. Fujiwara, W. Pan, N. Usami, K. Sawada, A. Nomura, T. Ujihara, T. Shishido and K. Nakajima,
J. Cryst. Growth, 275, (2005), pp. 467-473.

“Influence of growth temperature on minority-carrier lifetime of Si layer grown by liquid phase epitaxy using Ga solvent”,
Y. Satoh, N. Usami, W. Pan, K. Fujiwara, K. Nakajima, and T. Ujihara,
J. Appl. Phys., 98, (2005), 073708.

“Growth of SiGe-on-insulator and its application as a substrate for epitaxy of strained-Si layer”,
U. Noritaka, K. Kutsukake, W. Pan, K. Fujiwara, T. Ujihara, B. Zhang, T. Yokoyama, K. Nakajima,
J. Cryst. Growth, 275, (2005), pp. 1203-1207.

“メサ構造ＩｎＰテンプレート基板へのＩｎＡｓ量子ドットの成長とサイズ制御”,
宇治原 徹, 吉田義浩, 李祐植, 竹田美和,
信学技報 105, (2005), pp. 23-26.

“太陽電池用Si系バルク多結晶の結晶成長及び太陽電池特性　―多結晶Siの融液成長のその場観察とバルク多結晶SiGeの特性評価―”,
藤原航三, 宇佐美徳隆, 藩伍根, 宇治原徹, 野村明子, 野瀬嘉太郎, 宍戸統悦, 中嶋一雄,
日本結晶成長学会誌, 32, (2005), pp. 291-296.

●プロシーディングス
“Analytical evaluation of growth process in a sub-micron scale selective-area growth by OMVPE”,
T. Ujihara, Y. Yoshida, W. S. Lee, R. Oga, Y. Takeda,
The 17th Indium Phosphide and Related Materials Conference (IPRM05), Glasgow, Scotland, UK, 8-12 May (2005), p112.

“Electrical Properties around Grain Boundary of Poly-Crystalline Silicon for Solar Cell Evaluated Using the Conductive AFM”,
T. Ujihara, K. Nakajima, Y. Takeda,
15th PVSEC, Shanghai, China, 11-15 October (2005), pp. 118-119.