“Grain growth behaviors of polycrystalline silicon during melt growth processes”,
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima,
J. Cryst. Growth, 266, (2004), pp. 441-448.

“Effects of growth temperature on the surface morphology of silicon thin-film on (111) silicon monocrystalline substrate grown by liquid phase epitaxy”,
T. Ujihara, E. Kanda, K. Obara, N. Usami, K. Fujiwara, G. Sazaki, T. Shishido, K. Nakajima,
J. Cryst. Growth, 266, (2004), pp. 467-474.

“Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate”,
K. Kutsukake, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, K. Nakajima, B. P. Zhang, and Y. Segawa,
Appl. Surf. Sci. 224, (2004), pp. 604-607.

“Phase diagram of growth mode for the SiGe/Si heterostructure system with misfit dislocations”,
K. Nakajima, T. Ujihara, N. Usami, K. Fujiwara, G. Sazaki, and T. Shishido,
J. Cryst. Growth, 260, (2004), pp. 372-383.

“In-situ observations of melt growth behavior of polycrystalline silicon”,
K. Fujiwara, Y. Obinata, T. Ujihara, N. Usami, G. Sazaki and K. Nakajima,
J. Cryst. Growth, 262, (2004), pp. 124-129.

“Fabrication of solar cell with stacked Ge islands for enhanced absorption in the infrared regime”,
N. Usami, A. Alguno, K. Sawano, T. Ujihara, K. Fujiwara, G. Sazaki, Y. Shiraki, and K. Nakajima,
Thin Solid Films 451-452, (2004), pp. 604-607.

“Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate”,
G. Sazaki, T. Fujino, J.T. Sadowski, N. Usami, T. Ujihara, K. Fujiwara, H. Takahashi, E. Matsubara, T. Sakurai, K. Nakajima,
J. Cryst. Growth, 262, (2004), pp. 196-201.

“In-situ observation of elementary growth steps on the surface of protein crystals by laser confocal microscopy”,
G. Sazaki, T. Matsui, K. Tsukamoto, N. Usami, T. Ujihara, K. Fujiwara, K. Nakajima,
J. Cryst. Growth, 262, (2004), pp. 536-542.

“Effects of spacer thickness on quantum efficiency of the solar cells with embedded Ge islands in the intrinsic layer”,
A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano and Y Shiraki,
Appl. Phys. Lett. 84, (2004), pp. 2802-2804.

“Ge composition dependence of properties of solar cells based on multicrystalline SiGe with microscopic compositional distribution”,
W. Pan, K. Fujiwara, N. Usami, T. Ujihara, K. Nakajima, R. Shimokawa,
J. Appl. Phys. 96, (2004), pp. 1238-1241.

“Successful growth of InxGa1-xAs (x > 0.18) single bulk crystal directly on GaAs seed crystal with preferential orientation”,
Y. Azuma, Y. Nishijima, K. Nakajima, N. Usami, K. Fujiwara, T. Ujihara,
Jpn. J. Appl. Phys. 46-2, (2004), L907.

“Crystal quality evaluation of 6H-SiC layers grown by liquid phase epitaxy around micropipes using micro-Raman scattering spectroscopy”,
T. Ujihara, S. Munetoh, K. Kusunoki, K. Kamei, N. Usami, K. Fujiwara, G. Sazaki, and K. Nakajima,
Mater. Sci. Forum, 457-460, (2004), pp. 633-637.

“Solution growth of self standing 6H-SiC single crystal using metal solvent”,
K. Kusunoki, S. Munetoh, K. Kamei, M. Hasebe, T. Ujihara and K. Nakajima,
Mater. Sci. Forum, 457-460, pp. 123-126.

“TEM studies on the initial stage of seeded solution growth of 6H-SiC using metal solvent”,
K. Kamei, K. Kusunoki, S. Munetoh, T. Ujihara and K. Nakajima,
Mater. Sci. Forum, 457-460, (2004), pp. 347-351.

“Relationship between device performance and grain boundary structural configuration in a solar cell based on multicrystalline SiGe”,
N. Usami, WG. Pan, K. Fujiwara, T. Ujihara, G. Sazaki and K.Nakajima,
Jpn. J. Appl. Phys. 43, (2004), L250-L252.

“On the origin of strain fluctuation in strained-Si grown on SiGe-on-insulator and SiGe virtual substrates”,
K. Kutsukake, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, and K. Nakajima,
Appl. Phys. Lett. 85, (2004), pp. 1335-1337.

“Molten metal flux growth and properties of CrSi2”,
T. Shishido, S. Okada, Y. Ishizawa, K. Kudou, K. Iizumi, Y. Sawada, H. Horiuchi, K. Inaba, T. Sekiguchi, J. Ye, S. Miyashita, A. Nomura, T. Sugawara, K. Obara, M. Oku, K. Fujiwara, T. Ujihara, G. Sazaki, N. Usami, S. Kohiki, Y. Kawazoe and K. Nakajima,
J. Alloy Comp. 383, (2004), pp. 319-321.

“材料工学からの太陽電池研究”,
宇治原徹,
まてりあ, 43, (2004), pp. 949-953.

“SiGeバルク単結晶と多結晶の成長技術およびそれらのデバイス応用 : 均一組成のバルク単結晶とミクロ分散的組成分布を有する太陽電池用バルク多結晶”,
中嶋一雄, 藤原航三, 宇佐美徳隆, 藩伍根, 佐崎元, 宇治原徹, 宍戸統悦,
日本結晶成長学会誌, 31, (2004), pp.29-37.

●プロシーディングス
“Excellent Effect of Gallium Solvent on Preparation of High Lifetime Silicon Crystal by LPE Method”,
T. Ujihara, Y. Satoh, K. Obara, K. Fujiwara, G. Sazaki, N. Usami, T. Shishido and K. Nakajima,
14th PVSEC, 26-30 January (2004) Chulalongkorn University, Bangkok, Thailand.