“New method for measurement of interdiffusion coefficient in high temperature solutions based on Fick’s first law”,
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima,
J. Cryst. Growth, 241, (2002), pp. 387-394.

“Simultaneous in-situ measurement of solute and temperature distributions in the alloy solutions”,
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima,
J. Cryst. Growth, 242, (2002), pp. 313-320.

“In-situ observation of the Marangoni convection of a NaCl aqueous solutions under microgravity”,
G. Sazaki, S. Miyashita, M. Nokura, T. Ujihara, N. Usami, and K. Nakajima,
J. Cryst. Growth, 234, (2002), pp. 516-522.

“Melt growth of multicrystalline SiGe with large compositional distribution for new solar cell applications”,
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki, and T. Shishido,
Sol. Energy Mater. Sol. Cells, 72, (2002), pp. 93-100.

“Control of macroscopic absorption coefficient of multicrystalline SiGe by microscopic compositional distribution”,
N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, K. Nakajima, and H. Yaguchi,
Jpn. J. Appl. Phys., 41, (2002), L37-L39.

“In-situ monitoring system of the position and temperature at the crystal-solution interface”,
G. Sazaki, Y. Azuma, S. Miyashita, N. Usami, T. Ujihara, K. Fujiwara, Y. Murakami, and K. Nakajima,
J. Cryst. Growth, 236, (2002), pp. 125-131.

“Fabrication of SiGe bulk crystals with uniform composition as substrates for Si-based heterostructures”,
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Fujiwara, Y. Murakami, and K. Nakajima,
Mat. Sci. Eng., B89, (2002), pp. 364-367.

“Evidence for the presence of built-in strain in multicrystalline SiGe with large compositional distribution”,
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima,
Jpn. J. Appl. Phys., 41, (2002), pp. 4462-4465.

“Growth and properties of SiGe multicrystals with microscopic compositional distribution for high-efficiency solar cells”,
K. Nakajima, N. Usami, K. Fujiwara, Y. Murakami, T. Ujihara, G. Sazaki and T. Shishido,
Sol. Energy Mater. Sol. Cells, 73, (2002), pp. 305-320.

“Compositional variation in Si-rich SiGe single crystals grown by multi-component zone melting method using Si seed and source crystals”,
K. Nakajima, T. Kusunoki, Y. Azuma, N. Usami, K. Fujiwara, T. Ujihara, G. Sazaki, and T. Shishido,
J. Cryst. Growth, 240, (2002), pp. 373-381.

“In situ observation of crystal growth behavior from silicon melt”,
K. Fujiwara, Ke. Nakajima, T. Ujihara, N. Usami, G. Sazaki, H. Hasegawa, S. Mizoguchi, K. Nakajima,
J. Cryst. Growth, 243, (2002), pp. 275-282.

“Evaluation of mutual and intrinsic diffusion coefficients in the liquid GaGe binary system using novel determination method based on Fick’s first law”,
T. Ujihara, K. Fujiwara, G. Sazaki, N. Usami, K. Nakajima,
J. Non-Cryst. Solids, 312-314, (2002), pp. 196-202.

“Strain distribution of Si thin film grown on multicrystalline-SiGe with microscopic compositional distribution”,
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima,
J. Appl. Phys., 92, (2002), pp. 7098-7201.

“均一組成SiGeバルク結晶成長と関連する測定技術”,
宇治原徹, 我妻幸長, 宇佐美徳隆, 佐崎 元, 藤原航三, 宍戸統悦, 中嶋一雄,
日本結晶成長学会誌, 29, (2002), pp.399.

●プロシーディングス
“Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties”,
T. Ujihara, E. Kanda, K. Fujiwara, G. Sazaki, N. Usami, Y. Murakami, K. Kitahara and K. Nakajima,
Proc. Int. Conf. on 29th IEEE Photovoltaic Specialists Conference, (2002), pp. 1339-1342.

“Si/multicrystalline-SiGe heterostructure as a candidate for solar cells with high conversion efficiency”,
N. Usami, T. Takahashi, K. Fujiwara, T. Ujihara, G. Sazaki, Y. Murakami, and K. Nakajima,
Proc. Int. Conf. on 29th IEEE Photovoltaic Specialists Conference, (2002), pp. 247-249.

“Effect of growth temperature on surface morphology and crystal quality of Si thin-film by liquid phase epitaxial growth technique”,
T. Ujihara, E. Kanda, K. Fujiwara, N. Usami, G. Sazaki, K. Nakajima,
Proc. PV in Europe from PV Technology to Energy Solutions Conference and Exhibition, Palazzo dei Congressi, Roma, Italy, 7-11 October (2002), pp. 408-411.