“Assessing composition gradient energy effects due to spin interaction on the spinodal decomposition of Fe-Cr”,
T. Ujihara, K. Osamura,
Mater. Sci. Eng. A, 312, (2001), 128.

“Physical model for the evaluation of solid-liquid interfacial tension in silicon”,
T. Ujihara, G. Sazaki, K. Fujiwara, N. Usami, K. Nakajima,
J. Appl. Phys., 90, (2001), pp. 750-755.

“Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt interface using in-situ monitoring system”,
Y. Azuma, N. Usami, T. Ujihara, G. Sazaki, Y. Murakami, S. Miyashita, K. Fujiwara, and K. Nakajima,
J. Cryst. Growth, 224, (2001), pp. 204-211.

“Growth of SixGe1-x (x≒0.15) Bulk Crystal with Uniform Composition by Utilizing in situ Monitoring of the Crystal-Solution Interface”,
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, S. Miyashita, Y. Murakami, and K.Nakajima,
Jpn. J. Appl. Phys., 44, (2001), pp. 4141-4144.

“Effects of misfit dislocation and AlN buffer layer on the GaInN/GaN phase diagram of the growth modes”,
K. Nakajima, T. Ujihara, and G. Sazaki,
J. Appl. Phys., 89, (2001), pp. 146-153.

“Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method”,
N. Usami, Y. Azuma, T. Ujihara, G. Sazaki, K. Nakajima, Y. Yakabe, T. Kondo, K.Kawaguchi, S. Koh, Y. Shiraki, B. P. Zhang, Y. Segawa, and S. Kodama,
Semicon. Sci. and Technol., 16, (2001), pp. 699-703.